Singh, Manikant, Casbon, Michael A.  ORCID: https://orcid.org/0000-0002-8637-9888, Uren, Michael J, Pomeroy, James W, Dalcanale, Stefano, Karboyan, Serge, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka and Kuball, Martin
2018.
Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs.
IEEE Electron Device Letters
39
(10)
, pp. 1572-1575.
10.1109/LED.2018.2865832
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Abstract
Comparison between pulsed and CW large signal RF performance of field-plated β-Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga 2 O 3 is a good candidate for future RF applications.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Engineering |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0741-3106 |
| Date of First Compliant Deposit: | 5 February 2019 |
| Date of Acceptance: | 14 August 2018 |
| Last Modified: | 03 May 2023 12:05 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/119150 |
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