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Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs

Singh, Manikant, Casbon, Michael A. ORCID:, Uren, Michael J, Pomeroy, James W, Dalcanale, Stefano, Karboyan, Serge, Tasker, Paul J. ORCID:, Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka and Kuball, Martin 2018. Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs. IEEE Electron Device Letters 39 (10) , pp. 1572-1575. 10.1109/LED.2018.2865832

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Comparison between pulsed and CW large signal RF performance of field-plated β-Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga 2 O 3 is a good candidate for future RF applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Date of First Compliant Deposit: 5 February 2019
Date of Acceptance: 14 August 2018
Last Modified: 25 Oct 2022 13:11

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