Singh, Manikant, Casbon, Michael A., Uren, Michael J, Pomeroy, James W, Dalcanale, Stefano, Karboyan, Serge, Tasker, Paul J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka and Kuball, Martin
2018.
Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs.
IEEE Electron Device Letters
39
(10)
, pp. 1572-1575.
10.1109/LED.2018.2865832
![]() |
Preview |
PDF
- Published Version
Available under License Creative Commons Attribution No Derivatives. Download (804kB) | Preview |
Abstract
Comparison between pulsed and CW large signal RF performance of field-plated β-Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga 2 O 3 is a good candidate for future RF applications.
Item Type: | Article |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
Date of First Compliant Deposit: | 5 February 2019 |
Date of Acceptance: | 14 August 2018 |
Last Modified: | 20 Mar 2021 02:32 |
URI: | https://orca.cardiff.ac.uk/id/eprint/119150 |
Citation Data
Cited 40 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
![]() |
Edit Item |