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Degradation studies of InAs/GaAs QD lasers grown on Si

Shutts, Samuel ORCID:, Allford, C. P. ORCID:, Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. ORCID: 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE, pp. 85-86. 10.1109/ISLC.2018.8516178

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Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: IEEE
ISBN: 978-1-5386-6486-5
ISSN: 1947-6981
Date of First Compliant Deposit: 21 February 2019
Last Modified: 07 Nov 2023 05:19

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