Shutts, Samuel ![]() ![]() ![]() ![]() |
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Official URL: https://doi.org/10.1109/ISLC.2018.8516178
Abstract
Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | IEEE |
ISBN: | 978-1-5386-6486-5 |
ISSN: | 1947-6981 |
Date of First Compliant Deposit: | 21 February 2019 |
Last Modified: | 27 Nov 2024 00:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/119642 |
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