Optical study of p-Doping in GaAs Nanowires for low-threshold and high-yield lasing

Alanis, Juan Arturo, Lysevych, Mykhaylo, Burgess, Tim, Saxena, Dhruv, Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Skalsky, Stefan, Tang, Xiaoyan, Mitchell, Peter, Walton, Alex S., Tan, Hark Hoe, Jagadish, Chennupati and Parkinson, Patrick 2019. Optical study of p-Doping in GaAs Nanowires for low-threshold and high-yield lasing. Nano Letters 19 (1) , pp. 362-368. 10.1021/acs.nanolett.8b04048

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Abstract

Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps–1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm–3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm–2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	1530-6984
Date of First Compliant Deposit:	4 March 2019
Date of Acceptance:	7 December 2018
Last Modified:	28 Nov 2024 13:00
URI:	https://orca.cardiff.ac.uk/id/eprint/120150

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