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Optical study of p-Doping in GaAs Nanowires for low-threshold and high-yield lasing

Alanis, Juan Arturo, Lysevych, Mykhaylo, Burgess, Tim, Saxena, Dhruv, Mokkapati, Sudha ORCID:, Skalsky, Stefan, Tang, Xiaoyan, Mitchell, Peter, Walton, Alex S., Tan, Hark Hoe, Jagadish, Chennupati and Parkinson, Patrick 2019. Optical study of p-Doping in GaAs Nanowires for low-threshold and high-yield lasing. Nano Letters 19 (1) , pp. 362-368. 10.1021/acs.nanolett.8b04048

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Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps–1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm–3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm–2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 1530-6984
Date of First Compliant Deposit: 4 March 2019
Date of Acceptance: 7 December 2018
Last Modified: 07 Nov 2023 03:00

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