120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts

Boyd, E, Moran, D, McLelland, H, Elgaid, K ORCID: https://orcid.org/0000-0003-3265-1097, Chen, Y, Macintyre, D, Thomas, S, Stanley, C R and Thayne, I G 2003. 120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts. Presented at: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 October 2002. Proceedings of the Compound Semiconductors Conference 2002. Institute of Physics Conference Series Boca Raton: CRC Press, -.

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Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	CRC Press
ISBN:	9780750309424
Last Modified:	04 Nov 2022 12:18
URI:	https://orca.cardiff.ac.uk/id/eprint/122556

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