McPherson, D.S., Elgaid, K. ![]() |
Official URL: http://dx.doi.org/10.1109/EDMO.2000.919035
Abstract
This paper presents the use of a nonlinear TOPAS/sup TM/ model to describe the behaviour of an AlGaAs/InGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented by the IMST for Agilent EDA's Series IV/sup TM/ and ADS/sup TM/ circuit simulators.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 078036550X |
Last Modified: | 24 Nov 2022 12:19 |
URI: | https://orca.cardiff.ac.uk/id/eprint/122572 |
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