W-band on wafer measurement of active and passive devices

Edgar, D.L., Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097, Williamson, F, Ross, A, McLelland, H, Ferguson, S, Doherty, F, Thayne, I.G., Taylor, M.R.S and Beaumont, S.P. 2002. W-band on wafer measurement of active and passive devices. Presented at: IEE Colloquium on Microwave Measurements: Current Techniques and Trends, London, U.K., 23 February 1999. Proceedings of IEE Colloquium on Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008). , vol.1999 IEEE, 10.1049/ic:19990025

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Abstract

In this paper we have presented a study of the effect of back-thinning standard CPW wafers and the influence on measured W-band performance. Improvements in measured insertion loss and substrate cross-talk have been observed, and a study of the effect of a quartz spacer layer has been made. Additionally, the improvement in measured performance of active devices after wafer thinning has also been shown, and further progress is expected in this area.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Publisher:	IEEE
Last Modified:	04 Nov 2022 12:18
URI:	https://orca.cardiff.ac.uk/id/eprint/122578

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