Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs

Thayne, I.G., Taylor, M.R.S., Cameron, N.I., Holland, M.C., Beaumont, S.P., Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097, Belle, G. and Fairbairn, S. 1995. Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs. Electronics Letters 31 (4) , pp. 324-326. 10.1049/el:19950206

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Abstract

The authors report the input referred low-frequency noise (2-100 kHz) spectra of 0.2 mu m-gate-length GaAs MESFETs which were gate-recess-etched using a selective Freon 12 based dry-etching process. For comparison, the noise spectra of nonselective wet-chemical, ammonia-based gate-recess-etched devices are also presented. Little change in low-frequency noise performance is observed for devices dry-etched for 30-50 s, demonstrating the latitude of the dry-etch process. Additionally, the input referred noise of the wet-etched devices was greater than that of 30, 40 and 50 s dry-etched devices, suggesting that the dry-etching process may passivate traps contributing to the low-frequency noise component of the MESFETs.<>

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	Institution of Engineering and Technology (IET)
ISSN:	0013-5194
Last Modified:	04 Nov 2022 12:18
URI:	https://orca.cardiff.ac.uk/id/eprint/122584

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