Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process

Thayne, I., Elgaid, K ORCID: https://orcid.org/0000-0003-3265-1097, Borsosfoldi, Z., Webster, D., Murad, S., Ward, B., Ferguson, S., Cameron, N., Edgar, D., Valin, I., Holland, M., Taylor, M., Haigh, D., Beaumont, S. and Sewell, J. 1997. Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process. Presented at: IEE Colloquium on RF and Microwave Circuits for Commercial Wireless Applications, London, United Kingdom, 13-13 February 1997. IEE Colloquium on RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026). IEE, 03-06. 10.1049/ic:19970168

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Abstract

In this paper, we have demonstrated two monolithic microwave integrated circuits fabricated using the Glasgow 0.2 /spl mu/m GaAs MESFET MMIC process, namely a 1 GHz active resonator and a 35 GHz integrated LNA/mixer. An identical process was used for the realisation of both these circuits. This demonstrates that with an advanced MMIC process, both high frequency and high functionality circuits can be realised, as will be required to meet the needs of future wireless communication systems.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Engineering
Publisher:	IEE
Last Modified:	04 Nov 2022 12:18
URI:	https://orca.cardiff.ac.uk/id/eprint/122589

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