Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si

Shang, Chen, Wan, Yating, Norman, Justin, Jung, Daehwan, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Lau, Kei May, Gossard, Arthur C. and Bowers, John E. 2019. Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si. Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019. Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, -. 10.1364/CLEO_SI.2019.STu3N.1

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Abstract

Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by reducing the threading dislocation density, from 7 × 107 to 3 × 106cm−2.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	paper STu3N.1.
Publisher:	OSA Publishing
ISBN:	978-1-943580-57-6
Last Modified:	04 Nov 2022 12:19
URI:	https://orca.cardiff.ac.uk/id/eprint/122597

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