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Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si

Shang, Chen, Wan, Yating, Norman, Justin, Jung, Daehwan, Li, Qiang, Lau, Kei May, Gossard, Arthur C. and Bowers, John E. 2019. Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si. Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019. Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, -. 10.1364/CLEO_SI.2019.STu3N.1

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Abstract

Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by reducing the threading dislocation density, from 7 × 107 to 3 × 106cm−2.

Item Type: Conference or Workshop Item (Paper)
Status: Published
Schools: Physics and Astronomy
Additional Information: paper STu3N.1.
Publisher: OSA Publishing
ISBN: 978-1-943580-57-6
Last Modified: 17 May 2019 14:00
URI: https://orca.cardiff.ac.uk/id/eprint/122597

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