InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band

Wang, Yating, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Geng, Yu, Shi, Bei and Lau, Kei May 2015. InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band. Applied Physics Letters 107 (8) , 081106. 10.1063/1.4929441

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Abstract

We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-Vgrooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3 lm room temperature emission from high-density (5.6 1010 cm2 ) QDs has been obtained, with a narrow full-width-at-half-maximum of 29 meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of Acceptance:	15 August 2015
Last Modified:	04 Nov 2022 12:19
URI:	https://orca.cardiff.ac.uk/id/eprint/122600

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