Shi, Bei, Han, Yu, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May
2019.
1.55 μm lasers epitaxially grown on silicon.
IEEE Journal of Selected Topics in Quantum Electronics
25
(6)
, 1900711.
10.1109/JSTQE.2019.2927579
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Abstract
We have developed InP based 1.55 μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition (MOCVD) grown 1.55 μm InAs QDs and the InP/Si thin film templates, we have achieved electrically driven 1.55 μm QD lasers on Si operating at room-temperature. To reduce device footprint and energy consumption, a buffer-less integration path by growing InP nano-ridge lasers on pre-patterned silicon-on-insulators (SOI) wafers has been explored. Material and device characterizations and an outlook for device component integration is discussed.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| ISSN: | 1077-260X |
| Date of First Compliant Deposit: | 15 July 2019 |
| Date of Acceptance: | 9 July 2019 |
| Last Modified: | 26 Nov 2024 19:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/124195 |
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