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1.55 μm lasers epitaxially grown on silicon

Shi, Bei, Han, Yu, Li, Qiang and Lau, Kei May 2019. 1.55 μm lasers epitaxially grown on silicon. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900711. 10.1109/JSTQE.2019.2927579

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We have developed InP based 1.55 μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition (MOCVD) grown 1.55 μm InAs QDs and the InP/Si thin film templates, we have achieved electrically driven 1.55 μm QD lasers on Si operating at room-temperature. To reduce device footprint and energy consumption, a buffer-less integration path by growing InP nano-ridge lasers on pre-patterned silicon-on-insulators (SOI) wafers has been explored. Material and device characterizations and an outlook for device component integration is discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 15 July 2019
Date of Acceptance: 9 July 2019
Last Modified: 11 Mar 2020 00:15

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