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1.55 μm lasers epitaxially grown on silicon

Shi, Bei, Han, Yu, Li, Qiang ORCID: and Lau, Kei May 2019. 1.55 μm lasers epitaxially grown on silicon. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900711. 10.1109/JSTQE.2019.2927579

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We have developed InP based 1.55 μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition (MOCVD) grown 1.55 μm InAs QDs and the InP/Si thin film templates, we have achieved electrically driven 1.55 μm QD lasers on Si operating at room-temperature. To reduce device footprint and energy consumption, a buffer-less integration path by growing InP nano-ridge lasers on pre-patterned silicon-on-insulators (SOI) wafers has been explored. Material and device characterizations and an outlook for device component integration is discussed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 15 July 2019
Date of Acceptance: 9 July 2019
Last Modified: 07 Nov 2023 05:37

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