90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology

Benakaprasad, B., Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X. and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, -. 10.1109/IRMMW-THz.2019.8873748

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Abstract

We demonstrate a quadrature branch-line coupler operating at 90 GHz on GaN-on-low resistivity silicon substrates (ρ <; 40 Ω.cm). To reduce the losses offered by the low-resistivity silicon at 90 GHz, a shielding technique is used where the silicon substrate is covered by a ground plane (Al metal). SiO 2 dielectric of thickness 10 μm is used as a spacer between the top metal and ground plane to further improve the performance of the coupler. Measured results showed return loss and isolation as low as -25 dB and -16 dB respectively, and coupling loss of -4 ± 0.5 dB from 81 GHz to 101 GHz. The output amplitude imbalance achieved was less than 1 dB. The coupler validates the shielding MMIC technology on GaN-on-low resistivity silicon substrate.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9781538682869
ISSN:	2162-2035
Last Modified:	14 Dec 2022 03:16
URI:	https://orca.cardiff.ac.uk/id/eprint/126957

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