Benakaprasad, B., Eblabla, A. ![]() ![]() |
Abstract
We demonstrate a quadrature branch-line coupler operating at 90 GHz on GaN-on-low resistivity silicon substrates (ρ <; 40 Ω.cm). To reduce the losses offered by the low-resistivity silicon at 90 GHz, a shielding technique is used where the silicon substrate is covered by a ground plane (Al metal). SiO 2 dielectric of thickness 10 μm is used as a spacer between the top metal and ground plane to further improve the performance of the coupler. Measured results showed return loss and isolation as low as -25 dB and -16 dB respectively, and coupling loss of -4 ± 0.5 dB from 81 GHz to 101 GHz. The output amplitude imbalance achieved was less than 1 dB. The coupler validates the shielding MMIC technology on GaN-on-low resistivity silicon substrate.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 9781538682869 |
ISSN: | 2162-2035 |
Last Modified: | 14 Dec 2022 03:16 |
URI: | https://orca.cardiff.ac.uk/id/eprint/126957 |
Citation Data
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