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90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology

Benakaprasad, B., Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X. and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, -. 10.1109/IRMMW-THz.2019.8873748

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Abstract

We demonstrate a quadrature branch-line coupler operating at 90 GHz on GaN-on-low resistivity silicon substrates (ρ <; 40 Ω.cm). To reduce the losses offered by the low-resistivity silicon at 90 GHz, a shielding technique is used where the silicon substrate is covered by a ground plane (Al metal). SiO 2 dielectric of thickness 10 μm is used as a spacer between the top metal and ground plane to further improve the performance of the coupler. Measured results showed return loss and isolation as low as -25 dB and -16 dB respectively, and coupling loss of -4 ± 0.5 dB from 81 GHz to 101 GHz. The output amplitude imbalance achieved was less than 1 dB. The coupler validates the shielding MMIC technology on GaN-on-low resistivity silicon substrate.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9781538682869
ISSN: 2162-2035
Last Modified: 25 Nov 2022 11:47
URI: https://orca.cardiff.ac.uk/id/eprint/126957

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