Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Giraud, Paul, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Pak, Sangyeon, Sohn, Jung Inn, Morris, Stephen, Cha, SeungNam and Kim, Jong Min 2018. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires. Nanotechnology 29 (7) , 075202. 10.1088/1361-6528/aaa2e6

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Abstract

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing: Hybrid Open Access
ISSN:	0957-4484
Date of First Compliant Deposit:	25 February 2020
Date of Acceptance:	19 December 2017
Last Modified:	06 May 2023 00:42
URI:	https://orca.cardiff.ac.uk/id/eprint/129544

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