Simultaneous optical and electrical characterization of GaN nanowire arrays by means of Vis-IR spectroscopic ellipsometry

Santos, Antonio J., Lacroix, Bertrand, Blanco, Eduardo, Hurand, Simon, Gomez, Victor J., Paumier, Fabien, Girardeau, Thierry, Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481, García, Rafael and Morales, Francisco M. 2020. Simultaneous optical and electrical characterization of GaN nanowire arrays by means of Vis-IR spectroscopic ellipsometry. Journal of Physical Chemistry C 124 (2) , pp. 1535-1543. 10.1021/acs.jpcc.9b10556

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Abstract

We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems. To reproduce the optical free-carrier behavior in the infrared, the ellipsometric data acquired were fitted to an anisotropic Bruggeman model including Tauc-Lorentz and Drude oscillators, which enabled the determination of carrier density and in-grain mobility. The nice agreement of these results with those obtained by combining Hall effect measurements, X-ray diffraction, and transmission electron microscopy studies supported the validity of the proposed method, opening new horizons in the characterization of nanowire-based semiconducting layers.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	1932-7447
Date of First Compliant Deposit:	12 February 2020
Date of Acceptance:	27 December 2019
Last Modified:	22 Nov 2024 17:30
URI:	https://orca.cardiff.ac.uk/id/eprint/129573

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