Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite

Anyebe, E. A. ORCID: https://orcid.org/0000-0001-6642-9334, Sanchez, A. M., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B. J., Kolosov, O., Anderson, F., Sundaram, R., Wang, Z. M., Falko, V. and Zhuang, Q. 2015. Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite. Nano Letters 15 (7) , pp. 4348-4355. 10.1021/acs.nanolett.5b00411

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Abstract

The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	American Chemical Society
ISSN:	1530-6984
Date of First Compliant Deposit:	15 June 2020
Last Modified:	05 May 2023 17:18
URI:	https://orca.cardiff.ac.uk/id/eprint/132417

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