Anyebe, E. A. ![]() ![]() |
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Abstract
The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | American Chemical Society |
ISSN: | 1530-6984 |
Date of First Compliant Deposit: | 15 June 2020 |
Last Modified: | 05 May 2023 17:18 |
URI: | https://orca.cardiff.ac.uk/id/eprint/132417 |
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