Chen, Baile, Wan, Yating, Xie, Zhiyang, Huang, Jian, Zhang, Ningtao, Shang, Chen, Norman, Justin, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Tong, Yeyu, Lau, Kei May, Gossard, Arthur C. and Bowers, John E.
2020.
Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si.
ACS Photonics
7
(2)
, 528–533.
10.1021/acsphotonics.9b01709
|
Preview |
PDF
- Accepted Post-Print Version
Download (785kB) | Preview |
Abstract
Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (−5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | American Chemical Society |
| ISSN: | 2330-4022 |
| Date of First Compliant Deposit: | 25 June 2020 |
| Date of Acceptance: | 8 January 2020 |
| Last Modified: | 24 Nov 2024 23:15 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/132798 |
Citation Data
Cited 34 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
 |
Edit Item |
Altmetric
Altmetric