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Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si

Chen, Baile, Wan, Yating, Xie, Zhiyang, Huang, Jian, Zhang, Ningtao, Shang, Chen, Norman, Justin, Li, Qiang, Tong, Yeyu, Lau, Kei May, Gossard, Arthur C. and Bowers, John E. 2020. Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si. ACS Photonics 7 (2) , 528–533. 10.1021/acsphotonics.9b01709

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Abstract

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (−5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 2330-4022
Date of First Compliant Deposit: 25 June 2020
Date of Acceptance: 8 January 2020
Last Modified: 20 Jan 2021 12:37
URI: https://orca.cardiff.ac.uk/id/eprint/132798

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