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Stacking fault-associated polarised surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

Church, S. A., Ding, B., Mitchell, P. W., Kappers, M. J., Frentrup, M., Kusch, G., Fairclough, M., Wallis, D. J. ORCID:, Oliver, R. A. and Binks, D. J. 2020. Stacking fault-associated polarised surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells. Applied Physics Letters 117 (3) , 032103. 10.1063/5.0012131

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Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: AIP Publishing
ISSN: 0003-6951
Date of First Compliant Deposit: 7 July 2020
Date of Acceptance: 6 July 2020
Last Modified: 14 Jun 2024 18:03

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