3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode

Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Li, Haochen, Ahmed, Jamal and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2020. 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode. IEEE Photonics Journal 12 (4) , 6802008. 10.1109/JPHOT.2020.3006957

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Abstract

GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a lack of model to accurately evaluate the avalanche breakdown performance in nanowire SPAD with a spatially non-uniform electric field. In this work, we have developed a three-dimensional (3D) Simple Monte Carlo statistical model for GaAs nanowire SPADs. Model validation includes ionisation coefficients of GaAs and avalanche gain in GaAs nanowire avalanche photodiode. We also apply our model to predict the device performances of breakdown probability, mean time to breakdown and timing jitter, which are essential parameters for SPAD design. Simulating a PN junction GaAs nanowire SPAD design using our model, we found that device performances have little dependence on the primary carrier injection type, but the nanowire doping concentration requires optimization for high performance SPAD design and operation.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	1943-0655
Date of First Compliant Deposit:	14 July 2020
Date of Acceptance:	29 June 2020
Last Modified:	05 May 2023 02:39
URI:	https://orca.cardiff.ac.uk/id/eprint/133429

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