Design and characterisation of an outphasing power amplifier with balun combiner

Bogusz, Aleksander, Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Watkins, Gavin T. and Cripps, Steve ORCID: https://orcid.org/0000-0002-2258-951X 2019. Design and characterisation of an outphasing power amplifier with balun combiner. Presented at: 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G), Altanta, GA, USA, 15-16 August 2019. 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G). IEEE, pp. 1-3. 10.1109/IMC-5G47857.2019.9160351

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Abstract

This paper presents an outphasing power amplifier using a planar balun as power combiner. The balun with bandwidth extending to and over octave was fabricated using thin film technology on alumina substrate. The design adopts a hybrid approach, utilising a pair of bare die devices with bond-wire connections to the alumina passive networks, to minimise the extra parasitic effects introduced by packaging. The characterised prototype, that uses the TGF2023-01-2 12 W GaN HEMT from Qorvo, operates at centre frequency of 1.9 GHz and demonstrates a 15% bandwidth, where the maximum output power is maintained within 0.5 dB deviation from 41.2 dBm. On the same bandwidth, the PAE is above 55% and 44% when operating at its peak and 6 dB output back-off (OBO) output power, respectively. The Power back-off is realised by both amplitude and relative phase modulation.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	IEEE
ISBN:	9781728131436
Last Modified:	07 Dec 2022 14:03
URI:	https://orca.cardiff.ac.uk/id/eprint/135704

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