Abdullah, Isam, Macdonald, J Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Lin, Yen-Hung, Anthopoulos, Thomas D, Hma Salahr, Nasih, AnwarKakil, Shaida and Muhammedsharif, Fahmi F 2020. Bias stability of solution-processed In2O3 thin film transistors. Journal of Physics: Materials 4 , 015003. 10.1088/2515-7639/abc608 |
Preview |
PDF
- Published Version
Available under License Creative Commons Attribution. Download (1MB) | Preview |
Abstract
We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.
Item Type: | Article |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | Original content fromthis work may be usedunder the terms of theCreative CommonsAttribution 4.0 licence.Any further distributionof this work mustmaintain attribution tothe author(s) and the titleof the work, journalcitation and DOI. |
Publisher: | IOP Press |
ISSN: | 2515-7639 |
Date of First Compliant Deposit: | 26 October 2020 |
Date of Acceptance: | 29 October 2020 |
Last Modified: | 05 May 2023 03:13 |
URI: | https://orca.cardiff.ac.uk/id/eprint/135927 |
Citation Data
Cited 2 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
Edit Item |