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Alloy segregation at stacking faults in zincblende GaN heterostructures

Ding, B., Frentrup, M., Fairclough, S. M., Kappers, M. J., Jain, M., Kovács, A., Wallis, D. J. ORCID: and Oliver, R. A. 2020. Alloy segregation at stacking faults in zincblende GaN heterostructures. Journal of Applied Physics 128 (14) , 145703. 10.1063/5.0015157

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Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy dispersive x-ray spectrometry is used to investigate the effects of alloy segregation around stacking faults in a zincblende III-nitride light-emitting structure, incorporating InGaN quantum wells and an AlGaN electron blocking layer. It is found that in the vicinity of the stacking faults, the indium and aluminum contents were a factor of 2.3 ± 1.3 and 1.9 ± 0.5 higher, respectively, than that in the surrounding material. Indium and aluminum are also observed to segregate differently in relation to stacking faults with indium segregating adjacent to the stacking fault while aluminum segregates directly on the stacking fault.

Item Type: Article
Date Type: Publication
Schools: Engineering
Publisher: AIP Publishing
ISSN: 0021-8979
Date of First Compliant Deposit: 10 December 2020
Date of Acceptance: 21 September 2020
Last Modified: 07 Nov 2023 00:47

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