Implementing dopant-free hole-transporting layers and metal-incorporated CsPbI2Br for stable all-inorganic perovskite solar cells

Mali, Sawanta S., Patil, Jyoti V., Steele, Julian A., Rondiya, Sachin R., Dzade, Nelson Y. ORCID: https://orcid.org/0000-0001-7733-9473 and Hong, Chang Kook 2021. Implementing dopant-free hole-transporting layers and metal-incorporated CsPbI2Br for stable all-inorganic perovskite solar cells. ACS Energy Letters 6 , pp. 778-788. 10.1021/acsenergylett.0c02385

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Abstract

Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Chemistry Advanced Research Computing @ Cardiff (ARCCA)
Publisher:	American Chemical Society
ISSN:	2380-8195
Funders:	EPSRC
Date of First Compliant Deposit:	3 February 2021
Date of Acceptance:	2 December 2020
Last Modified:	05 May 2023 00:43
URI:	https://orca.cardiff.ac.uk/id/eprint/138203

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