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Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability

Ahmed, Jamal, Xie, Shiyu ORCID:, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj ORCID:, David, John. P. R. and Huffaker, Diana L. ORCID: 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) , 4500206. 10.1109/JQE.2021.3058356

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Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients (α and β respectively). The α/β ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Additional Information: "© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9197
Date of First Compliant Deposit: 10 February 2021
Date of Acceptance: 1 February 2021
Last Modified: 10 Nov 2023 08:18

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