Alimohammadi, Yashar, Kuwata, Eigo, Liu, Xuan, Azad, Ehsan M., Bell, James  ORCID: https://orcid.org/0000-0002-4815-2199, Wu, Lei, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 and Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349
2021.
Incorporating gate-lag effects into the Cardiff Behavioural Model.
Presented at: 50th European Microwave Conference (EuMC 2020),
Utrecht, Netherlands,
12-14 January 2021.
2020 50th European Microwave Conference (EuMC).
IEEE,
pp. 684-687.
10.23919/EuMC48046.2021.9338185
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Abstract
This paper investigates, for the first time, the sensitivity of the Cardiff Model coefficients to device traps. A pre-bias is utilized to change the traps level of the device before pulsed DC & RF load-pull measurements are performed. It is shown that the pre-bias gate-lag conditions can change the load-pull contours and model coefficients. The Cardiff model coefficients are analysed at different gate-lag levels and their dependence to gate-lag is determined. It is observed that a quadratic function can account for the variation of the model coefficients as a function of the gate-lag pre-bias. Moreover, the variation of these coefficients as a function of time along the RF pulse and their dependency on the pre-bias conditions is also undertaken to show a link between model coefficients and device traps.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Schools > Engineering |
| Publisher: | IEEE |
| ISBN: | 9782874870590 |
| Last Modified: | 11 Mar 2023 02:52 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/139341 |
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