Incorporating gate-lag effects into the Cardiff Behavioural Model

Alimohammadi, Yashar, Kuwata, Eigo, Liu, Xuan, Azad, Ehsan M., Bell, James ORCID: https://orcid.org/0000-0002-4815-2199, Wu, Lei, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 and Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 2021. Incorporating gate-lag effects into the Cardiff Behavioural Model. Presented at: 50th European Microwave Conference (EuMC 2020), Utrecht, Netherlands, 12-14 January 2021. 2020 50th European Microwave Conference (EuMC). IEEE, pp. 684-687. 10.23919/EuMC48046.2021.9338185

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Abstract

This paper investigates, for the first time, the sensitivity of the Cardiff Model coefficients to device traps. A pre-bias is utilized to change the traps level of the device before pulsed DC & RF load-pull measurements are performed. It is shown that the pre-bias gate-lag conditions can change the load-pull contours and model coefficients. The Cardiff model coefficients are analysed at different gate-lag levels and their dependence to gate-lag is determined. It is observed that a quadratic function can account for the variation of the model coefficients as a function of the gate-lag pre-bias. Moreover, the variation of these coefficients as a function of time along the RF pulse and their dependency on the pre-bias conditions is also undertaken to show a link between model coefficients and device traps.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9782874870590
Last Modified:	11 Mar 2023 02:52
URI:	https://orca.cardiff.ac.uk/id/eprint/139341

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