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Watt-level 21-25 GHz integrated Doherty power amplifier in GaAs technology

Ramella, Chiara, Camarchia, Vittorio, Piacibello, Anna, Piacibello, Anna, Pirola, Marco and Quaglia, Roberto ORCID: 2021. Watt-level 21-25 GHz integrated Doherty power amplifier in GaAs technology. IEEE Microwave and Wireless Components Letters 31 (5) , pp. 505-508. 10.1109/LMWC.2021.3069555

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This paper presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150nm pHEMT technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21 GHz-25 GHz range, the output power is above 29.5 dBm, with an associated PAE higher than 30 %. At 6 dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1531-1309
Date of First Compliant Deposit: 6 May 2021
Date of Acceptance: 25 March 2021
Last Modified: 07 Nov 2023 05:29

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