Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology

Alathbah, M., Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE, pp. 14-18. 10.1109/ASDAM50306.2020.9393861

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Abstract

In this letter, the design and demonstration of a frequency doubler is presented utilizing the in-house developed technology of AlGaN/GaN multichannel Schottky barrier diode (SBD). The results show a promising GaN frequency multiplier that can be used in 5G transceivers. The conversion loss is about 15dB across the entire band (5-25 GHz). Further, the input return loss is below -10dB and the second harmonic output power is sitting at 5dBm across the whole band. Additionally, the output power of the fundamental harmonic is 40dBm or more less than the second harmonic output power level. Moreover, the conversion efficiency is about 21% for the optimum input power (20dBm). To our knowledge, this is the first multi-channel GaN-base Schottky diode frequency multiplier to be demonstrated.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9781728197760
ISSN:	2474-9737
Last Modified:	10 Feb 2024 02:08
URI:	https://orca.cardiff.ac.uk/id/eprint/140971

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