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Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Kwan, D. C. M., Kesaria, M. ORCID:, Anyebe, E. A. ORCID:, Alshahrani, D. O., Delmas, M. ORCID:, Liang, B. L. and Huffaker, D. L. ORCID: 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118 (20) , 203102. 10.1063/5.0045703

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We report on a 10 μm InAs/GaSb type-II superlattice (T2SL) grown by molecular beam epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical and structural properties in comparison with a T2SL grown on a GaSb substrate. The reference T2SL on GaSb is of high structural quality as evidenced in the high-resolution x-ray diffraction (HRXRD) measurement. The full width at half maximum (FWHM) of the HRXRD peak of the T2SL on GaAs is 5 times larger than that on GaSb. The long-wave infrared (LWIR) emission spectra were analyzed, and the observed transitions were in good agreement with the calculated emission energies. The photoluminescence (PL) intensity maxima (Imax) of ∼10 μm at 77 K is significantly reduced by a factor of 8.5 on the GaAs substrate. The peak fitting analysis of the PL profile indicates the formation of sub-monolayer features at the interfaces. PL mapping highlights the non-uniformity of the T2SL on GaAs which corroborates with Nomarski imaging, suggesting an increase in defect density.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 24 May 2021
Date of Acceptance: 4 May 2021
Last Modified: 23 Jul 2024 18:18

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