An interlinked computational-experimental investigation into SnS nano-flakes for field emission application

Nasane, Mamta P., Rondiya, Sachin R., Jadhav, Chandradip D., Rahane, Ganesh, Cross, Russell William, Jathar, Sagar, Jadhav, Yogesh, Barma, Sunil, Nilegave, Dhanraj, Jadkar, Vijaya, Rokade, Avinash, Funde, Adinath M, Chavan, Padmakar G., Hoye, Robert L Z, Dzade, Nelson Yaw ORCID: https://orcid.org/0000-0001-7733-9473 and Jadkar, Sandesh R 2021. An interlinked computational-experimental investigation into SnS nano-flakes for field emission application. New Journal of Chemistry 45 , pp. 11768-11779. 10.1039/D1NJ00902H

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Abstract

Layered binary semiconductor materials have attracted significant interest as field emitters due to their low work function, mechanical stability, high thermal and electrical conductivity. Herein, we report a systematic experimental and theoretical investigation of SnS nanoflakes synthesized using a simple, low-cost, and non-toxic hot injection method for field emission studies. The field emission studies were carried out on SnS nanoflakes thin film prepared using a simple spin coat technique. The x-ray diffraction (XRD) and Raman spectroscopy analysis revealed an orthorhombic phase of SnS. Scanning electron microscopy (SEM) analysis revealed that as-synthesized SnS has flakes-like morphology. The formation of pure-phase SnS nanoflakes was further confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The UV-Visible-NIR spectroscopy analysis shows that SnS nanoflakes have a sharp absorption edge observed in the UV region and have a band gap of ∼ 1.66 eV. In addition, the first-principles density functional theory (DFT) calculations were carried out to provide atomic-level insights into the crystal structure, band structure, and density of states (DOS) of SnS nanoflakes. The field emission properties of SnS nanoflakes were also investigated and found that SnS nanoflakes have a low turn-on field (∼ 6.2 V/μm for 10 μA/cm2), high emission current density (∼ 104 μA/cm2 at 8.0 V/μm), superior current stability (∼ 2.5 hrs for ∼ 1 μA) and a high field enhancement factor of 1735. The first principle calculations the predicted lower work function of different surfaces, especially for the most stable SnS (001) surface ( = 4.32 eV), is believed to be responsible for the observed facile electron emission characteristics. We anticipate that the SnS could be utilized for future vacuum nano/microelectronic and flat panel display applications due to the low turn-on field and flakes-like structure.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Chemistry Advanced Research Computing @ Cardiff (ARCCA)
Publisher:	Royal Society of Chemistry
ISSN:	1144-0546
Funders:	EPSRC
Date of First Compliant Deposit:	28 May 2021
Date of Acceptance:	25 May 2021
Last Modified:	12 Nov 2024 09:30
URI:	https://orca.cardiff.ac.uk/id/eprint/141633

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