Dhara, Soumen ![]() ![]() ![]() |
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Abstract
We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~ 10−4 A (a photo-to-dark current ratio of ~ 107) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits strong PPC with long-lasting recovery time, which leads the appearance of the conductor-like behaviour in ZTO semiconductor. In the present case, the conductivity changes over six orders of magnitude, from ~ 10−7 to 0.92/Ω/cm. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep states and tail states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-bandgap tail states of the ZTO in the strong PPC, while deep states contribute to mild PPC.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | This article is licensed under a Creative Commons Attribution 4.0 International License |
Publisher: | Nature Research |
ISSN: | 2045-2322 |
Funders: | EPSRC |
Date of First Compliant Deposit: | 1 October 2021 |
Date of Acceptance: | 24 August 2021 |
Last Modified: | 12 May 2023 20:13 |
URI: | https://orca.cardiff.ac.uk/id/eprint/144598 |
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