Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation

Jang, Hyeon-Sik, Kim, Tae-Hoon, Kim, Byeong Geun, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Lee, In-Hwan, Jung, Su-Ho, Lee, Jae-Hyun, Cha, SeungNam, Yang, Cheol-Woong, Kim, Byung-Sung and Whang, Dongmok 2021. Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation. Nano Letters 21 (23) , pp. 9909-9915. 10.1021/acs.nanolett.1c02982

Preview

PDF - Accepted Post-Print Version Download (818kB) | Preview

Abstract

While the orientation-dependent properties of semiconductor nanowires have been theoretically predicted, their study has long been overlooked in many fields owing to the limits to controlling the crystallographic growth direction of nanowires (NWs). We present here the orientation-controlled growth of single-crystalline germanium (Ge) NWs using a self-catalytic low-pressure chemical vapor deposition process. By adjusting the growth temperature, the orientation of growth direction in GeNWs was selectively controlled to the ⟨110⟩, ⟨112⟩, or ⟨111⟩ directions on the same substrate. The NWs with different growth directions exhibit distinct morphological features, allowing control of the NW morphology from uniform NWs to nanoribbon structures. Significantly, the VLS-based self-catalytic growth of the ⟨111⟩ oriented GeNW suggests that NW growth is possible for single elementary materials even without an appropriate external catalyst. Furthermore, these findings could provide opportunities to investigate the orientation-dependent properties of semiconductor NWs.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	1530-6984
Date of First Compliant Deposit:	30 November 2021
Date of Acceptance:	29 November 2021
Last Modified:	06 Nov 2023 21:32
URI:	https://orca.cardiff.ac.uk/id/eprint/145826

Actions (repository staff only)

Edit Item