Bishop, S. G., Hadden, J. P. ![]() ![]() |
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Abstract
Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.
Item Type: | Article |
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Date Type: | Published Online |
Status: | Published |
Schools: | Engineering Physics and Astronomy |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
Date of First Compliant Deposit: | 15 March 2022 |
Date of Acceptance: | 2 March 2022 |
Last Modified: | 30 Nov 2022 04:33 |
URI: | https://orca.cardiff.ac.uk/id/eprint/148061 |
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