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Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Bishop, S. G., Hadden, J. P., Hekmati, R., Cannon, J. K., Langbein, W. W. and Bennett, A. J. 2022. Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens. Applied Physics Letters 120 , 114001. 10.1063/5.0085257

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Abstract

Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Engineering
Physics and Astronomy
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 15 March 2022
Date of Acceptance: 2 March 2022
Last Modified: 17 May 2022 07:28
URI: https://orca.cardiff.ac.uk/id/eprint/148061

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