Deng, Huiwen, Jarvis, Lydia, Li, Zhibo  ORCID: https://orcid.org/0000-0002-6913-1426, Liu, Zizhuo, Tang, Mingchu, Li, Keshuang ORCID: https://orcid.org/0000-0002-6913-1426, Yang, Junjie, Maglio, Benjamin, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Yu, Jiawang, Wang, Lingfang, Chen, Siming, Jin, Chaoyuan, Seeds, Alwyn, Liu, Huiyun and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842
2022.
The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers.
Journal of Physics D: Applied Physics
55
(21)
, 215105.
10.1088/1361-6463/ac55c4
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Abstract
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Additional Information: | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. |
| Publisher: | IOP Publishing |
| ISSN: | 0022-3727 |
| Date of First Compliant Deposit: | 17 March 2022 |
| Date of Acceptance: | 16 February 2022 |
| Last Modified: | 05 Jan 2024 07:55 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/148431 |
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