The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers

Deng, Huiwen, Jarvis, Lydia, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Liu, Zizhuo, Tang, Mingchu, Li, Keshuang ORCID: https://orcid.org/0000-0002-6913-1426, Yang, Junjie, Maglio, Benjamin, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Yu, Jiawang, Wang, Lingfang, Chen, Siming, Jin, Chaoyuan, Seeds, Alwyn, Liu, Huiyun and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55 (21) , 215105. 10.1088/1361-6463/ac55c4

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Abstract

The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence.
Publisher:	IOP Publishing
ISSN:	0022-3727
Date of First Compliant Deposit:	17 March 2022
Date of Acceptance:	16 February 2022
Last Modified:	05 Jan 2024 07:55
URI:	https://orca.cardiff.ac.uk/id/eprint/148431

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