Deng, Huiwen, Jarvis, Lydia, Li, Zhibo ![]() ![]() ![]() ![]() ![]() |
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Abstract
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. |
Publisher: | IOP Publishing |
ISSN: | 0022-3727 |
Date of First Compliant Deposit: | 17 March 2022 |
Date of Acceptance: | 16 February 2022 |
Last Modified: | 05 Jan 2024 07:55 |
URI: | https://orca.cardiff.ac.uk/id/eprint/148431 |
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