Band-edge absorption characteristics of semi-insulating indium phosphide under unified Franz-Keldysh and Einstein models

MacGillivray, Alexander C., Lesack, Nikolai I., Hristovski, Ilija R., Jenne, Matthias F., Maglio, Benjamin C., Gorgani, Sayra and Holzman, Jonathan F. 2022. Band-edge absorption characteristics of semi-insulating indium phosphide under unified Franz-Keldysh and Einstein models. Physical Review B 105 (15) , 155203. 10.1103/PhysRevB.105.155203

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Abstract

The foundational Franz-Keldysh effect and Einstein model are applied in this work to characterize semiconductor band-edge absorption—and its departures from ideality. We unify the Franz-Keldysh and Einstein models to fully characterize the field-induced tunneling of photoexcited electrons from degenerate valence bands into the conduction band, with encroachment into the band gap arising as an Urbach tail. Our unified model is implemented for semi-insulating indium phosphide (SI-InP) with strong agreement seen between the theoretical and experimental results for varied photon energies and electric fields.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Physical Society
ISSN:	2469-9950
Date of First Compliant Deposit:	19 May 2022
Date of Acceptance:	23 March 2022
Last Modified:	05 Jan 2024 07:55
URI:	https://orca.cardiff.ac.uk/id/eprint/149860

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