Relaxation and dephasing of multiexcitons in semiconductor quantum dots

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2002. Relaxation and dephasing of multiexcitons in semiconductor quantum dots. Physical Review Letters (PRL) 89 (18) , 187401. 10.1103/PhysRevLett.89.187401

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Abstract

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0031-9007
Last Modified:	06 May 2023 17:17
URI:	https://orca.cardiff.ac.uk/id/eprint/1542

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