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Relaxation and dephasing of multiexcitons in semiconductor quantum dots

Borri, Paola ORCID:, Langbein, Wolfgang Werner ORCID:, Schneider, S., Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2002. Relaxation and dephasing of multiexcitons in semiconductor quantum dots. Physical Review Letters (PRL) 89 (18) , 187401. 10.1103/PhysRevLett.89.187401

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We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0031-9007
Last Modified: 01 Dec 2022 10:15

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