Plasma etching and surface characteristics depending on the crystallinity of the BaTiO3 thin film

Lee, Han Byeol, Joo, Young-Hee, Patil, Harshada, Kim, Gwan-Ha, Kang, Insu, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Kim, Deok-kee, Um, Doo-Seung and Kim, Chang-Il 2023. Plasma etching and surface characteristics depending on the crystallinity of the BaTiO3 thin film. Materials Research Express 10 (1) , 016401. 10.1088/2053-1591/aca9a9

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Abstract

Due to its high dielectric constant (κ), the BaTiO3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film etching process is required for such nanoscale device applications. Herein, the etching characteristics and surface properties are examined according to the crystallinity of the BTO thin film. The results demonstrate that the etching rate is low in the high-crystallinity thin film, and the surface residues are much lower than in the low-crystallinity thin film. In particular, the accelerated Cl radicals in the plasma are shown to penetrate more easily into the low-crystallinity thin film than the high-crystallinity thin film. After the etching process, the surface roughness is significantly lower in the high-crystallinity thin film than in the low-crystallinity thin film. This result is expected to provide useful information for the process design of high-performance electronic devices.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	2053-1591
Date of First Compliant Deposit:	10 December 2022
Date of Acceptance:	7 December 2022
Last Modified:	06 May 2023 16:18
URI:	https://orca.cardiff.ac.uk/id/eprint/154796

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