Development and modelling of gallium nitride based lateral schottky barrier diodes with anode recesses for mmwave and thz applications

Alathbah, Moath 2022. Development and modelling of gallium nitride based lateral schottky barrier diodes with anode recesses for mmwave and thz applications. Micromachines 14 (1) , 2. 10.3390/mi14010002

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Abstract

This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by/4.0/, Type: open-access
Publisher:	MDPI
Date of First Compliant Deposit:	6 January 2023
Date of Acceptance:	17 December 2022
Last Modified:	10 Feb 2024 02:08
URI:	https://orca.cardiff.ac.uk/id/eprint/155472

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