Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Ma, Jun, Zhu, Xueliang, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Zou, Xinbo and Lau, Kei May 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370 , pp. 265-268. 10.1016/j.jcrysgro.2012.10.028

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Abstract

We report the growth of high crystalline quality GaN-based light emitting diodes (LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both stress and dislocation engineering. A focused study involved comparison of different interlayer structures including low-temperature AlN, medium-temperature AlN multilayers and AlN/GaN supperlattice for optimization of the LED performance. The results show that the AlN/GaN supperlattice interlayer is the most effective in reducing the residual tensile stress and improving the crystalline quality of GaN on Si. With the AlN/GaN superlattice interlayer, optical properties of the LEDs were enhanced and optical output power of

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Elsevier
ISSN:	0022-0248
Last Modified:	05 Jun 2023 09:09
URI:	https://orca.cardiff.ac.uk/id/eprint/155661

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