Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

Zhu, Xueliang, Ma, Jun, Huang, Tongde, Li, Ming, Wong, Ka Ming and Lau, Kei May 2012. Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate. Physica Status Solidi (C) Current Topics in Solid State Physics 9 (3-4) , pp. 473-475. 10.1002/pssc.201100447

Full text not available from this repository.

Abstract

High mobility AlGaN/GaN HEMT was grown on silicon substrates by MOCVD. Smooth and crack-free wafers were obtained by implementation of an AlN/AlGaN super-lattice interlayer. We also found that the carrier gases have a great influence on the surface morphology of the AlGaN barrier. With a proper ratio of carrier gases, the AlGaN surface is significantly improved. With other optimized growth conditions, the electron mobility of HEMT can be as high as 1650 cm2/Vs. HEMT devices are also fabricatied and the reverse biased gate leakage current was reduced to 6.5 μA/mm at Vgs = -35 V.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Date of Acceptance:	23 August 2011
Last Modified:	09 Feb 2023 14:00
URI:	https://orca.cardiff.ac.uk/id/eprint/155673

Actions (repository staff only)

Edit Item