Behavioral model analysis of active harmonic load-pull measurements

Woodington, Simon Philip, Saini, Randeep, Williams, D., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2010. Behavioral model analysis of active harmonic load-pull measurements. Presented at: IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 23-28 May 2010. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International. New York: IEEE, pp. 1688-1691. 10.1109/MWSYM.2010.5517261

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Abstract

This paper outlines the formulation of a mixing based behavioral model, capable of capturing the nonlinear response of microwave transistors to fundamental and harmonic load pull effects for use in Computer Aided Design tools. The key to the model formulation was the experimental identification of the dominating mixing terms. The model is able to accurately compute the voltage and current waveforms present at a Transistors Terminals. The formulation lends itself to economical use of measured data, reducing data storage required within the CAD environment. In this paper the modeling approach has been demonstrated on a 10 × 75 μm GaAs HEMT operating at 9 GHz.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	Load-Pull ; S parameters ; behavioral modeling ; power amplifiers
Publisher:	IEEE
ISBN:	9781424460564
Last Modified:	18 Oct 2022 13:50
URI:	https://orca.cardiff.ac.uk/id/eprint/15602

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