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Determination of the Piezoelectric Field in InGaN Quantum Wells

Brown, Iain Henry, Pope, Iestyn ORCID:, Smowton, Peter Michael ORCID:, Blood, Peter, Thomson, John Duncan, Chow, W. W., Bour, D. P. and Kneissl, M. 2005. Determination of the Piezoelectric Field in InGaN Quantum Wells. Applied Physics Letters 86 , 131108. 10.1063/1.1896446

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In many studies, the value of the experimentally determined internal piezoelectric field has been reported to be significantly smaller than theoretical values. We believe this is due to an inappropriate approximation for the electric field within the depletion region, which is used in the analysis of experimental data, and we propose an alternative method. Using this alternative, we have measured the strength of the internal field of InGaN p-i-n structures, using reverse bias photocurrent absorption spectroscopy and by fitting the bias dependent peak energy using microscopic theory based on the screened Hartree-Fock approximation. The results agree with those using material constants interpolated from binary values.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: ------- Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at"
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 15 Sep 2023 18:21

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