Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Jarvis, Lydia 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. PhD Thesis, Cardiff University. Item availability restricted.

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Abstract

Three techniques for improving gain in InAs quantum dot lasers are examined. Silicon photonics is a promising solution for meeting increasing global data bandwidth demands. However, silicon itself is a poor emitter due to its indirect bandgap. One potential candidate for light sources for on-chip devices is the monolithic growth of III-V quantum dot materials onto silicon, however, III-V quantum dot materials exhibit reduced gain due to the differences in the population of electron and hole states and ultimately because of the difference in electron and hole effective masses. P-type modulation doping is a well-established strategy for improving gain in InAs quantum dot lasers on both native GaAs and silicon substrates. The doping density and positioning is optimised for a given wafer design, and ground state lasing at room temperature for a 400um lasing cavity is demonstrated, in addition to reduced sensitivity of threshold current to temperature. Optimized p-type modulation doping is compared to a relatively new approach to enhancing gain – direct n-type doping of the quantum dots. It is found to improve the gain in low loss operation, unlike p-type modulation doping. However, direct n-type doping detrimentally showed increased threshold current dependence compared with p-type modulation doping and decreased the maximum temperature at which ground state lasing could be attained. A novel third method is investigated in which both p-type modulation doping and direct n-type doping are applied to a device simultaneously, referred to as co-doping. Co-doping reduced the threshold current density from 245 A/cm^2 to 132 A/cm^2 at 27C and 731 A/cm^2 to 312 A/cm^2 at 97C, compared to undoped devices. The reduction was greater than for either individual doping strategy alone. Co-doping also retained the beneficial reduction in the sensitivity of the threshold current density to temperature provided by the p-type modulation doping.

Item Type:	Thesis (PhD)
Date Type:	Completion
Status:	Unpublished
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	InAs quantum dot laser 1.3um p-type modulation doping Direct n-type doping active region doping silicon photonics
Funders:	Cardiff University PSE College
Date of First Compliant Deposit:	25 May 2023
Last Modified:	25 May 2023 14:12
URI:	https://orca.cardiff.ac.uk/id/eprint/159976

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