Lei, C. H., Das, Arindam, Elliott, Martin  ORCID: https://orcid.org/0000-0002-9254-9898, Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Turner, M. L.
2004.
Au-poly(3-hexylthiophene) Contact Behaviour at High Resolution.
Synthetic Materials
145
(2-3)
, pp. 217-220.
10.1016/j.synthmet.2004.05.003
|
Abstract
The electrical properties of Au-on-poly(3-hexylthiophene) (P3HT) and P3HT on Au contacts have been compared, with high spatial resolution, using phase-mode electrostatic force microscopy (EFM-phase). The electrical potential profile, deduced from the phase measurements, demonstrates the existence of a high-resistance region in the P3HT close to the Au-on-P3HT contact, whereas the P3HT-on-Au contact exhibits good Ohmic behaviour. The results are consistent with recent I–V measurements, and can be explained in terms of defects induced during thermal evaporation of gold.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | Poly-(3-hexylthiophene); EFM-phase; Metal contact |
| ISSN: | 0379-6779 |
| Last Modified: | 17 Oct 2022 08:58 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/1625 |
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